Augustine, P (2023) Two-dimensional layered materials for efficient photodetection. [Book Chapter]
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Abstract
Photodetectors play a significant role in many optoelectronic devices, which convert optical signals/information to an equivalent electrical signal for processing and displaying. The quality of photodetection depends on various parameters like the efficiency of the detection, the range of wavelength that can be detected, the responsivity of the device, response time, etc. A thorough understanding of these figures of merit of a photodetector device and the mechanism involved will enable the engineer to design a quality photodetector to cater to the market demand. Even though the most prominent photodetector systems are based on Si technology, their range of detection is limited due to a significantly low energy band gap (1.1eV). Recent studies have established that transition metal dichalcogenides are ideal candidates for photodetection due to the various merits of TMDCs for photodetection over conventional silicon-based technology. Molybdenum disulfide (MoS2)-based photodetectors are reported to be a highly promising research avenue, which is analyzed briefly in the chapter. Also, the efficacy of the pulsed laser deposition in realizing MoS2-based thin film heterostructure photodetectors is analyzed.
Item Type: | Book Chapter |
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Publication: | Applications of Multifunctional Nanomaterials |
Publisher: | Elsevier |
Additional Information: | The copyright for this article belongs to the Elsevier |
Keywords: | Detection mechanism; Figures of merit; MoS2nano-thin films; Photodetection; PLD; TMDC |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 13 Jul 2023 09:47 |
Last Modified: | 08 Aug 2023 06:02 |
URI: | https://eprints.iisc.ac.in/id/eprint/82409 |
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