AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications

Gowrisankar, A and Vanjari, SC and Bardhan, A and Venugopalarao, A and Chandrasekar, H and Muralidharan, R and Raghavan, S and Nath, DN (2022) AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore.

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Abstract

In this study, we report on the electrical characteristics of AlGaN/GaN HEMT fabricated on a GaN-on-Si buffer scheme with a reverse-graded AlGaN back-barrier. Transistors exhibited a maximum DC drain current of 0.8 A/mm with a peak transconductance of 280 mS/mm. Devices exhibited off-state breakdown voltage greater than 100V, indicating good channel control even without compensation dopants. The current collapse in these devices was approximately 12% under drain-lag pulsed-IV measurements, indicating minimal trapping in this buffer scheme. RF small-signal measurements yielded peak ft/fmax figures of 31/72 GHz, respectively. A peak output power of 2.36 W/mm was obtained in pulsed load-pull measurements at 4 GHz with a Power-Added-Efficiency (PAE) of 18.1%.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	back-barrier; GaN-on-Si; HEMT; RF
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	28 Jun 2023 06:47
Last Modified:	28 Jun 2023 06:47
URI:	https://eprints.iisc.ac.in/id/eprint/82198

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