Variar, HB and Singh, A and Soni, A and Shrivastava, M (2022) Exploring the Feasibility of AlN/GaN HEMTs for THz Applications Using a Novel Device-Circuit Co-Design Approach. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.
PDF
ICEE_2022.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy |
Abstract
This work presents a rigorous device-circuit co-design investigation of AlN/GaN HEMT to explore its feasibility for operations at frequencies 1 THz. A novel device-circuit co-design methodology was adopted, which involves I-V/C-V/S-parameter matching, careful extraction of a small signal model and large-signal model. This was followed by source-load pull-based power amplifier (PA) design/exploration as a function of various device design parameters. For PA operation, both class-A and class-AB operations were invested while exploring PA gain, output power, efficiency at 1dB compression point, and linearity through dual-tone (IMD3) investigations. A complete range of device design parameters are evaluated to explore the ultimate scalability limit of AlN/GaN HEMT for possible THz operation. A correlation between the device's intrinsic parameters and PA performance has also been established to uncover AlN/GaN HEMT's feasibility for 1 THz active operation.
Item Type: | Conference Paper |
---|---|
Publication: | 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc. |
Keywords: | AlN/GaN HEMT; mmWave; THz |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 28 Jun 2023 05:20 |
Last Modified: | 28 Jun 2023 05:20 |
URI: | https://eprints.iisc.ac.in/id/eprint/82189 |
Actions (login required)
View Item |