A simple and cost-effective dual side lithography alignment process using a combination of a single mask and direct writing Double Exposure process

Prakash, G and Kumar, V and Sultana, S (2022) A simple and cost-effective dual side lithography alignment process using a combination of a single mask and direct writing Double Exposure process. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.

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Abstract

In this work, we present a discussion on an efficient and economical 'Double Exposure' (dual exposure or multiple exposures) method to achieve lithographic pattern alignments on opposite sides of various substrates (Silicon, GaN, GaAs, SiN) using Direct Writing tools and a single (standard) alignment marker photo mask. By exposing and developing the same photoresist (PR) multiple times, while using the corresponding lithographic tools in concert, the efficiency can be significantly improved while drastically reducing the resource cost with no compromise in the final resolution. The process has been optimized and demonstrated for repeatability in the lithography step followed by both etching and/or deposition (lift-off) processes. The proposed process is especially beneficial in the Backside Alignment (BSA) of Single- Side Polished (SSP) Silicon wafers. This has also been proven for BSA applications in full-fledged process flows for MEMS/NEMS and Heterogeneously-Integrated Devices.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Backside alignment; Direct writing; Double Exposure; Lithography; Mask exposure; MEMS; NEMS; pattern alignment
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	28 Jun 2023 05:17
Last Modified:	28 Jun 2023 05:17
URI:	https://eprints.iisc.ac.in/id/eprint/82185

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