Sputtered NiOx as a Hole Transport Layer in n-i-p Perovskite Solar Cells Manufactured on Steel Substrate

Kumar, S and Kant, R and Anadkat, N and Mehta, M and Pawar, V and Avasthi, S (2022) Sputtered NiOx as a Hole Transport Layer in n-i-p Perovskite Solar Cells Manufactured on Steel Substrate. In: 2022 IEEE International Conference on Emerging Electronics, 11- 14 Dec 2022, Bangalore.

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Abstract

NiOx is one of the potential alternates for organic hole transport (HTL) layer in perovskite solar cells (PSCs) due to its low-cost and chemical stability. Inherent insulating properties of NiOx, and requirement of post-processing steps in its solution processing are the limiting factors which restricts its routine use for further development and applications. This work reports sputtered NiOx as HTL in n-i-p configured PSC having stainless-steel as a substrate. The best device showed a power conversion efficiency of 5.37%. It exhibited a short-circuit current density (Jsc) of -9.58 mA/cm2, open circuit voltage (Voc) of 0.97V and a fill-factor (FF) of 58%. Due to the opaque nature of steel substrate, a semi-transparent ≈10 nm thin Au was thermally deposited as a top-transparent illumination contact. The poor performance of the device is mainly attributed to the poor transparency of the thin top-metal contact.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	hole transport layer; perovskite; sputtered NiOx; stainless steel substrate
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	28 Jun 2023 05:02
Last Modified:	28 Jun 2023 05:02
URI:	https://eprints.iisc.ac.in/id/eprint/82177

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