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Alternating Magnetic Field Hall Measurement on Low Mobility β-Ga2O3 Thin Films

Kundu, S and Mehta, M and Narasimhan, KL and Avasthi, S (2022) Alternating Magnetic Field Hall Measurement on Low Mobility β-Ga2O3 Thin Films. In: 2022 IEEE International Conference on Emerging Electronics, 11 - 14 December 2022, Bangalore, India.

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Official URL: https://doi.org/10.1109/ICEE56203.2022.10118158


In this paper, we compare the conventional DC Hall technique and alternating magnetic-field Hall measurement on a 1 per cent Si-doped ß Ga2O3 film. Such samples have a low carrier mobility, so accurately measuring the Hall voltage is quite challenging. To obtain a measurable signal with the Werner's DC Hall technique, one needs high magnetic field of 1.5 T. Even then, the true Hall signal (V Hall) is 22 times lower than the misalignment voltage. On the other hand, with the Alternating magnetic field Hall technique even low mobility values can be measured with a magnetic field of just 0.2 T, without any interference from misalignment voltage. The alternating magnetic field does produce a Faraday voltage, which is the same order of magnitude as the AC Hall signal. However, the Faraday component does not vary with the applied voltage. Also, the Faraday component can be scale down using low frequency and reducing the effective loop area. The AC Hall setup gives an opportunity to characterize transport in thin films with mobility less than 1 cm2 /Vs.

Item Type: Conference Paper
Publication: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the IEEE.
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 28 Jun 2023 05:00
Last Modified: 28 Jun 2023 05:00
URI: https://eprints.iisc.ac.in/id/eprint/82163

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