Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

Chaudhuri, RR and Joshi, V and Gupta, A and Joshi, T and Malik, RR and Mir, MA and Gupta, SD and Shrivastava, M (2023) Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

Through this work, a unique substrate temperature dependent evolution of hot electron distribution is reported in GaN HEMTs on C-doped GaN buffer, and its reliability consequences are discussed. With rise in substrate temperature, significant rise in hot electron concentration, its energy, and interaction with buffer traps is observed at the drain edge, in contrast to an expected reduction in hot electron population. A mechanism based on carrier de-trapping and transport to drain is proposed and experimentally validated.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Carbon doped GaN Buffer; Electroluminescence; GaN HEMT Reliability; High Temperature Reliability; Hot Electrons
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 10:35
Last Modified:	07 Jul 2023 10:35
URI:	https://eprints.iisc.ac.in/id/eprint/82111

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