Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs

Mir, MA and Joshi, V and Chaudhuri, RR and Munshi, MA and Malik, RR and Shrivastava, M (2023) Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

Through detailed experiments and computations, this study reveals a complex interplay of surface and buffer traps in determining AlGaN/GaN HEMT device's response to an OFF-state drain current injection stress. A time dependent drain voltage build-up is observed in the devices, followed by a gradual reduction for a drain current injection of a few nA. The process of voltage build-up is found to be assisted by channel depletion driven by dynamic trapping in the buffer acceptor traps, while the fall in voltage is caused by channel turn ON driven by trap ionization of the surface donors. Moreover, the current injection induced drain voltage build-up also resulted in a significant increase in the dynamic ON resistance of the device.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	AlGaN/GaN HEMTs; Current injection; Dynamic ON Resistance (RON); GaN buffer traps; GaN surface traps
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 06:28
Last Modified:	07 Jul 2023 06:28
URI:	https://eprints.iisc.ac.in/id/eprint/82106

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