Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs

Malik, RR and Joshi, V and Chaudhuri, RR and Mir, MA and Khan, Z and Shaji, AN and Bhattacharya, M and Vitthal, AT and Shrivastava, M (2023) Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs. In: 61st IEEE International Reliability Physics Symposium, IRPS 2023, 26-30 March 2023, Monterey.

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Abstract

In this work, we probe the physical mechanism responsible for V th and gate current instability in p-GaN Schottky gated AlGaN/GaN HEMTs. Devices exhibited a negative Vth shift accompanied by a distinct increase in gate current, followed by gate failure, when driven at positive gate over-drives. Temperature and frequency dependent CV analysis is carried out along with capacitive-DL TS measurements to probe and validate the physical mechanism responsible for the observed gate instabilities. Generation of hole traps with an energy level of 0.43e V, in response to gate bias stress is found to trigger gate instability, subsequently leading to device failure. © 2023 IEEE.

Item Type:	Conference Paper
Publication:	IEEE International Reliability Physics Symposium Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Gate Instability; Hole trap generation; p-GaN HEMT; Positive Gate Bias Stress
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	07 Jul 2023 16:15
Last Modified:	07 Jul 2023 16:15
URI:	https://eprints.iisc.ac.in/id/eprint/82104

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