An in-depth analysis on the switching response and impedance curves of n-si/In2O3 NW/Ag NPs/In based devices by a double-step glancing angle deposition technique

Nath, A and Sarkar, MB (2023) An in-depth analysis on the switching response and impedance curves of n-si/In2O3 NW/Ag NPs/In based devices by a double-step glancing angle deposition technique. In: Physica B: Condensed Matter, 660 .

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Abstract

Silver (Ag) nanoparticles (NPs) were coated upon indium oxide (In2O3) nanowires (NW) by a double-step glancing angle deposition (GLAD) technique. The study focuses on the experimental analysis of current (I) versus voltage (V), current (I) versus time (t), as well as impedance (Zexp) versus voltage (V) curves for n-Si/In2O3 NW/Ag NPs/In based devices with a sweeping voltage of ±10 V at room temperature in different frequency responses varying from 100 Hz to 2 MHz. The n-Si/In2O3 NW/Ag NPs/In based device showed faster rise and fall time of 0.13 s and 0.12 s than the other devices due to oxygen-related defect states. The presence of Ag NPs also improved oxygen related defect states, resulting in high impedance value for n-Si/In2O3 NW/Ag NPs/In based device. The series circuit model (SCM) was used to derive the theoretical investigations of impedances, indicating the n-Si/In2O3 NW/Ag NPs/In based device can be used in nanoelectronics applications.

Item Type:	Journal Article
Publication:	Physica B: Condensed Matter
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to Elsevier B.V.
Keywords:	Circuit simulation; Defect states; Deposition; Frequency response; Indium compounds; Oxygen; Silicon; Timing circuits, 'current; Circuit modeling; Double-step; Glancing Angle Deposition; Glancing angle deposition technique; Impedance; Oxygen-related defects; Series circuit model; Series circuits; Switching response, Nanoparticles
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	01 Jun 2023 05:38
Last Modified:	01 Jun 2023 05:38
URI:	https://eprints.iisc.ac.in/id/eprint/81543

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