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Modeling and Analysis of Device Orientation, Analog and Digital Performance of Electrode Design for High Speed Electro-Optic Modulator

Gaur, T and Mishra, P and Hegde, G and Srinivas, T (2023) Modeling and Analysis of Device Orientation, Analog and Digital Performance of Electrode Design for High Speed Electro-Optic Modulator. In: Photonics, 10 (3).

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Official URL: https://doi.org/10.3390/photonics10030301

Abstract

Electro-optic modulators (EOMs) are crucial devices for modern communication enabling high bandwidth optical communication links. Traveling wave electrodes are used to obtain high-speed modulation in these EOMs. We present the electrode design and analysis along with the study of effects of changing orientation on device performance for a thin-film lithium niobate tunable Mach–Zehnder interferometer (MZI) that offers sub-THz bandwidth operations. High velocity and impedance matching with low RF attenuation, high third-order SFDR (∼121 dB/Hz2/3) and a low half-wave voltage length product (1.74 V.cm) have been achieved for a bandwidth of 136 GHz. High-speed digital modulation using multi-level signal formats (PAM-2, QAM-4 and QAM-16) with low BER for 400 Gbps data has been demonstrated to assess the digital performance of the device.

Item Type: Journal Article
Publication: Photonics
Publisher: MDPI
Additional Information: The copyright for this article belongs to the Authors.
Keywords: electrode design; higher order modulation; integrated optoelectronic; optical communication; sub-Tbps communication; sub-THz communication; thin-film lithium niobate
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 25 May 2023 07:36
Last Modified: 25 May 2023 07:36
URI: https://eprints.iisc.ac.in/id/eprint/81504

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