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Moiré and beyond in transition metal dichalcogenide twisted bilayers

Tran, K and Choi, J and Singh, A (2021) Moiré and beyond in transition metal dichalcogenide twisted bilayers. In: 2D Materials, 8 (2).

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Official URL: https://doi.org/10.1088/2053-1583/abd3e7

Abstract

Fabricating van der Waals bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moiré excitons (MXs). In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide semiconductor twisted BL-HS. We look at existing evidence of MXs in localized and strongly correlated states, and at nanoscale mapping of moiré superlattice and lattice-reconstruction. This review will be helpful in guiding the community as well as motivating work in areas such as near-field optical measurements and controlling the creation of novel physical states.

Item Type: Journal Article
Publication: 2D Materials
Publisher: IOP Publishing Ltd
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Electronic properties; Excitons; Optical data processing; Optical properties; Van der Waals forces, Electronic and optical properties; Lateral confinement; Nanoscale mapping; Optical measurement; Optoelectronic properties; Physical systems; Reciprocal space; Transition metal dichalcogenides, Transition metals
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 May 2023 09:03
Last Modified: 11 May 2023 09:03
URI: https://eprints.iisc.ac.in/id/eprint/81474

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