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Impact of annealing on structural and optical properties of ZnO thin films

B, S and Singha, MK and Dwivedi, P (2023) Impact of annealing on structural and optical properties of ZnO thin films. In: Microelectronics Journal, 135 .

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Official URL: https://doi.org/10.1016/j.mejo.2023.105759


This paper analyzes the effect of annealing on morphological, structural and optical properties of Zinc Oxide (ZnO) thin films and their applications in optical sensing. ZnO thin films were deposited using radio frequency (RF) sputtering technique followed by annealing in presence of nitrogen environment at 100 °C, 200 °C and 300 °C. The effect of the annealing on surface and structural properties were studied through SEM, AFM, XRD, Raman and PL. Increment of the annealing temperature improves the texture coefficient of the film in (101) plane. Further optical sensing was performed on annealed ZnO thin films at room temperature. The results confirm that the annealing temperature of the thin films is related to crystalline structure and showed the highest optical response. The optimized annealed sample offers photo to dark current ratio (PDCR) in the order of 2.8 × 104. The annealed devices at 200 °C and 300 °C showed 102 times improved PDCR compared to devices annealed at 100 °C. This optimized sample showed improved results for UV range optical applications.

Item Type: Journal Article
Publication: Microelectronics Journal
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Elsevier Ltd.
Keywords: Annealing; II-VI semiconductors; Metallic films; Optical films; Optical properties; Oxide films; Textures; Zinc oxide, Annealing; Annealing temperatures; Dark current ratio; Micro-fabrication; Optical sensing; Photo to dark current ratio; Photosensing; Structural and optical properties; Thin-films; Zinc oxide thin films, Thin films
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 21 Apr 2023 10:25
Last Modified: 21 Apr 2023 10:25
URI: https://eprints.iisc.ac.in/id/eprint/81368

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