Majhi, K and Manu, VK and Ganesan, R and Anil Kumar, PS (2023) High-quality thin film growth of the weak topological insulator BiSe on Si (111) substrates via pulsed laser deposition. In: Journal of Applied Physics, 133 (7).
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Abstract
In this work, we report the growth of high-quality BiSe thin films deposited on Si (111) substrates at different temperatures via pulsed laser deposition. We observe poor sample quality at a low substrate temperature (Tsub = 175 °C), and as the substrate temperature increases, the crystallinity of the samples increases. At a substrate temperature, Tsub = 250 °C, BiSe Raman modes (modes centered around 97.6 and 112.9 cm-1) start to emerge with less intensity and evolve with the increase in the substrate temperature and at Tsub = 325 °C closely match with that of single crystals. These modes correspond to the vibrations of Se-atoms from the Bi2Se3 quintuple layers and Bi-atoms from the Bi-bilayer. By carefully investigating the structural properties and the Raman modes of BiSe thin films at each substrate temperature, we provide an optimal condition to grow high-quality thin films of BiSe by pulsed laser deposition. © 2023 Author(s).
| Item Type: | Journal Article |
|---|---|
| Publication: | Journal of Applied Physics |
| Publisher: | American Institute of Physics Inc. |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | Bismuth compounds; Crystallinity; Film growth; Pulsed laser deposition; Pulsed lasers; Silicon; Single crystals; Substrates; Thin films, High quality; Low substrate temperature; Pulsed-laser deposition; Raman modes; Sample quality; Si(111) substrate; Thin films growth; Thin-films; Topological insulators, Selenium compounds |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 15 Mar 2023 05:39 |
| Last Modified: | 15 Mar 2023 05:39 |
| URI: | https://eprints.iisc.ac.in/id/eprint/80978 |
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