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Synaptic behavior of Fe3O4-based artificial synapse by electrolyte gating for neuromorphic computing

Monalisha, P and Li, S and Bhat, SG and Jin, T and Anil Kumar, PS and Piramanayagam, SN (2023) Synaptic behavior of Fe3O4-based artificial synapse by electrolyte gating for neuromorphic computing. In: Journal of Applied Physics, 133 (8).

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Official URL: https://doi.org/10.1063/5.0120854


Neuromorphic computing (NC) is a crucial step toward realizing power-efficient artificial intelligence systems. Hardware implementation of NC is expected to overcome the challenges associated with the conventional von Neumann computer architecture. Synaptic devices that can emulate the rich functionalities of biological synapses are emerging. Out of several approaches, electrolyte-gated synaptic transistors have attracted enormous scientific interest owing to their similar working mechanism. Here, we report a three-terminal electrolyte-gated synaptic transistor based on Fe3O4 thin films, a half-metallic spinel ferrite. We have realized gate-controllable multilevel, non-volatile, and rewritable states for analog computing. Furthermore, we have emulated essential synaptic functions by applying electrical stimulus to the gate terminal of the synaptic device. This work provides a new candidate and a platform for spinel ferrite-based devices for future NC applications. © 2023 Author(s).

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to American Institute of Physics Inc.
Keywords: Computer architecture; Computer hardware; Ferrite; Magnetite, Artificial intelligence systems; Artificial synapse; Biological synapse; Hardware implementations; Neumann; Neuromorphic computing; Power efficient; Spinel ferrites; Thin-films; Working mechanisms, Electrolytes
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 15 Mar 2023 05:37
Last Modified: 15 Mar 2023 05:37
URI: https://eprints.iisc.ac.in/id/eprint/80977

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