Comparison of GaN and GaAs based Hall Magnetic Sensor for Power Applications

Kumar, Anuj and Muralidharan, R. and Narayanan, G. (2022) Comparison of GaN and GaAs based Hall Magnetic Sensor for Power Applications. In: 8th IEEE International Symposium on Smart Electronic Systems, iSES 2022, 19 - 21 December 2022, Warangal, 316 – 320.

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Abstract

Gallium Nitride (GaN) hetero-structure on Silicon (Si) and Silicon Carbide (SiC) substrates as well as Gallium Arsenide (GaAs) based Hall sensor are developed, evaluated and compared. Each sensor characterization is performed at various magnetic fields up to 2 T over a temperature range of 300 K to 500 K in step size of 25 K. Hall voltages of GaN on Si, GaN on SiC and GaAs sample are measured for magnetic fields ranging from 0.2 T to 2 T at different temperatures. GaAs being a low energy band gap material, its sensitivity drastically drops down from 4300V/AT at low temperatures to around 2500V/AT beyond room temperature. Contrarily, GaN based Hall sensors do not show much variation at high temperatures. The current relative sensitivity obtained experimentally is found to be around 40-50 V/A/T for GaN devices over the temperature range considered; for GaAs device, it is more than 500 V/AT at high temperatures. A very small variation of less than 5 in sensitivity is noted in GaN on Si and GaN on SiC substrates. Also, the absolute temperature co-efficient of GaN devices is 0.03/K and 0.02/K for Si and SiC substrates respectively whereas for GaAs devices is 0.23/K. © 2022 IEEE.

Item Type:	Conference Paper
Publication:	Proceedings - 2022 IEEE International Symposium on Smart Electronic Systems, iSES 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright of this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Energy gap; Gallium arsenide; Hall mobility; III-V semiconductors; Semiconducting gallium; Sensitivity analysis; Silicon; Silicon carbide; Substrates; Two dimensional electron gas; Hall sensor; Highest temperature; Magnetic field sensing; Magnetic-field; Mobility; Sensitivity; Silicon carbide substrates; Silicon substrates; Temperature range; Two-dimensional electron gas; Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electrical Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	09 Mar 2023 06:54
Last Modified:	09 Mar 2023 06:54
URI:	https://eprints.iisc.ac.in/id/eprint/80940

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