Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height

Roul, B and Singh, DK and Pant, R and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2021) Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height. In: Journal of Applied Physics, 129 (24).

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Abstract

Smart multifunctional materials such as vanadium dioxide (VO2), which exhibit a reversible semiconductor-to-metal transition (SMT), provide a new route toward engineering high speed switchable devices. Here, we present a detailed report on the modulation in the electrical properties of VO2/Si heterostructures by application of an external electrical field across VO2 thin films. Single-phase VO2 thin films have been deposited on an Si(111) substrate using the pulsed laser deposition technique. The electrical transport behavior across the VO2/Si heterostructure has been studied in the temperature range of 35-105 °C, and a reversible SMT can be seen at 68 and 63 °C for heating and cooling cycles, respectively. The temperature-dependent resistance of the device shows a hysteresis loop around the transition temperature of the VO2 thin film. In addition, the device shows a significant change in junction current when an external bias is applied on the VO2 thin film, and this phenomenon has been utilized to study the switching behavior of the device. Such behavior is due to the change in interfacial barrier height because of the bias dependent tilting of electronic energy bands of the VO2 thin film. Our results offer novel opportunities to externally control the electrical transport of vertical heterostructures and can be beneficial for extending the notion of electrical field modulation in electrical switches and sensors. © 2021

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Keywords:	Heterojunctions; Modulation; Pulsed laser deposition; Silicon; Silicon compounds; Thin film circuits; Vanadium dioxide, Electrical transport; Heating and cooling cycles; Interfacial barriers; Multi-functional materials; Pulsed-laser deposition technique; Semiconductor-to-metal transitions; Switching behaviors; Temperature-dependent resistance, Thin films
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	02 Mar 2023 09:30
Last Modified:	02 Mar 2023 09:30
URI:	https://eprints.iisc.ac.in/id/eprint/80826

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