Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing

Kumari, K and Vura, S and Raghavan, S and Avasthi, S (2021) Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing. In: Materials Letters, 285 .

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Abstract

Pulsed Nd:YAG (1064 nm) laser was used to crystallize amorphous germanium thin-films on silicon (0 0 1) wafer to get epitaxial Ge. Film thickness and laser fluence played a crucial role. Thicker films (≥300 nm) are polycrystalline while thinner films are epitaxial. Rocking curve measurements show improvement in crystallinity with increase in laser fluence. The full 2-in. laser crystallized wafer has omega scan of 0.20° and implied threading dislocation density of 6 × 108 cm−2. Hence, a fast, cost-effective, and low thermal budget process is used to achieve epitaxial Ge on Si for large area applications.

Item Type:	Journal Article
Publication:	Materials Letters
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to Elsevier B.V.
Keywords:	Amorphous silicon; Annealing; Budget control; Cost effectiveness; Crystallinity; Germanium; Neodymium lasers; Silicon wafers; Thin films; Yttrium aluminum garnet, Amorphous germanium; Cost effective; Germanium on silicons; Laser fluences; Low thermal budget; Polycrystalline; Pulsed laser annealing; Threading dislocation densities, Pulsed lasers
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	13 Apr 2023 10:04
Last Modified:	13 Apr 2023 10:04
URI:	https://eprints.iisc.ac.in/id/eprint/80630

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