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Near-infrared detection in Si/InP core-shell radial heterojunction nanowire arrays

Pal, B and Sarkar, KJ and Das, S and Banerji, P (2021) Near-infrared detection in Si/InP core-shell radial heterojunction nanowire arrays. In: Journal of Alloys and Compounds, 885 .

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Official URL: https://doi.org/10.1016/j.jallcom.2021.160943


We have explored the photodetection properties of a core-shell nanowire (NW) heterojunction based device consisting of p-Si/n-InP with an aim to provide an alternative to Si based photodetector by integrating a III-V material, viz. InP with silicon. The core is p-Si NWs, prepared by metal assisted chemical etching of p-type Si (100) substrate at room temperature using Ag nanoparticles, whereas n-type InP shells were deposited by metal organic chemical vapor deposition. The current-voltage characteristics of the device resemble that of a p-n junction with good rectification ratio in the dark, and provides photoresponse under visible and near-infrared (NIR) spectral region at low reverse bias condition. In the NIR regime, it shows an on/off ratio of 23 with a rise and fall time of 387 ms and 424 ms, respectively, at a reverse bias voltage of 2 V. The device exhibits a peak responsivity and detectivity of 2.749 A/W and 5.52 × 1011 Jones, respectively, at 920 nm under the same reverse bias voltage. Thus p-SiNW/n-InP core-shell based device could have the potential to be developed as an optoelectronic device beyond the traditional p-n junction exploiting its radial heterojunction based structure. © 2021 Elsevier B.V.

Item Type: Journal Article
Publication: Journal of Alloys and Compounds
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Elsevier Ltd.
Keywords: Electric rectifiers; Etching; Heterojunctions; III-V semiconductors; Infrared devices; Metal nanoparticles; Metallorganic chemical vapor deposition; Nanowires; Organometallics; Photodetectors; Photons; Silicon, Core shell; Infrared detection; InP; Metal-assisted chemical etching; Near Infrared; Near infrared photodetectors; Near-infrared; P-n junction; Reverse bias voltage; Si nanowire, Shells (structures)
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 24 Feb 2023 05:31
Last Modified: 24 Feb 2023 05:31
URI: https://eprints.iisc.ac.in/id/eprint/80586

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