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Sequential light irradiation and two-stage photoquenching in GaAs:EL2

Pandian, V and Kumar, V (1992) Sequential light irradiation and two-stage photoquenching in GaAs:EL2. In: Journal of Applied Physics, 72 (8). pp. 3818-3820.

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The phenomenon of two-stage photoquenching of EL2 defect in semi-insulating GaAs [V.Pandian and V. Kumar, J. Appl. Phys. 70, 5114 (1991)] is further investigated by sequentially irradiating the sample with different energy photons in the quenching band at constant temperature. The results of the new experiments, which are similar to the sequential quenching experiments with fixed photon energy at different temperatures, support the conclusion that the two-stage quenching.may be related to the possible lattice strain mediated cooperative structural distortion arising out of transition of EL2 to the metastable state.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: The American Institute of Physics
Additional Information: Copyright of this article belongs to The American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 Dec 2007
Last Modified: 19 Sep 2010 04:30
URI: http://eprints.iisc.ac.in/id/eprint/8058

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