A comprehensive study on effect of annealing on structural, morphological and optical properties of CdO and photodetection of heterojunction n-CdO/p-Si diode

Raj, ILP and Chidhambaram, N and Saravanakumar, S and Sasikumar, S and Varadharajaperumal, S and Alagarasan, D and Alshahrani, T and Shkir, M and AlFaify, S (2021) A comprehensive study on effect of annealing on structural, morphological and optical properties of CdO and photodetection of heterojunction n-CdO/p-Si diode. In: Optik, 241 .

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Abstract

The present investigation reports the synthesis of CdO using the facile sol-gel technique. The CdO samples exhibit cubic structure and their crystalline quality increases with different sintering temperatures (550, 650, and 750 °C). The maximum entropy method (MEM) was applied to calculate the charge density distribution of the CdO samples and the two-dimensional charge density maps showed a slight enlargement in the cell volume of the CdO with sintering temperatures. The bandgap of the CdO samples varied from 2.89 to 2.66 eV with increasing sintering temperature. Heterojunction n-CdO/p-Si photodiodes were constructed (using CdO samples) on silicon wafers using the spin coating procedure. The ideality factor of the diodes is found to decrease from 5.2 to 4.2 with sintering temperatures of the CdO. The heterojunction diode constructed using the CdO sample sintered at 750 °C exhibited the highest responsivity and external quantum efficiency values of 0.34 A/W and 109 , respectively. Improved crystallinity, responsivity, and quantum efficiency make the developed CdO device useful for optoelectronics. © 2021 Elsevier GmbH

Item Type:	Journal Article
Publication:	Optik
Publisher:	Elsevier GmbH
Additional Information:	The copyright for this article belongs to Elsevier GmbH.
Keywords:	Capacitance; Crystallinity; Efficiency; Heterojunctions; Maximum entropy methods; Photodiodes; Quantum efficiency; Rietveld refinement; Silicon wafers; Sintering; Sol-gels, Cadmium oxide; Effect of annealing; External quantum efficiency; Maximum-entropy methods; N-CdO/p-si photodiode; Optical-; Photo detection; Property; Responsivity; Sintering temperatures, Cadmium compounds
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	22 Feb 2023 03:40
Last Modified:	22 Feb 2023 03:40
URI:	https://eprints.iisc.ac.in/id/eprint/80436

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