Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics

Mondal, S and Kumar, A (2021) Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics. In: IEEE Transactions on Electron Devices, 68 (3). pp. 1190-1195.

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Abstract

We demonstrate the electronic trap energy distribution (ΔE IL ) in the wide bandgap, nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution has been measured by using the gate injection high-speed capacitance-voltage measurement technique and verified through conventional deep-level transient spectroscopy. The electronic trap energies in ALPO dielectrics were found to be influenced and, hence, tunable by the irradiation temperature. The nonirradiated dielectric film (NI-ALPO) displayed the maximum number of electronic traps at an energy level of 0.2 eV below the conduction band of silicon (Si-E CB ). On the other hand, the dielectric film irradiated at 200 °C confirmed the highest number of traps at the location of 0 eV and at the same energy level of Si-E CB . In addition, the NI-ALPO dielectric contained over 90% of traps in the deep level of the bandgap (below Si-E CB ). In contrast, the ALPO film irradiated at 200 °C accommodated a limited number of traps (~75%) at the deep level of the bandgap.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs toInstitute of Electrical and Electronics Engineers Inc.
Keywords:	Alumina; Capacitance; Deep level transient spectroscopy; Dielectric films; Energy gap; Silicon, Capacitance voltage measurements; Electronic traps; Gate injection; High Speed; Irradiation temperature; Trap energy; Wide band gap, Aluminum oxide
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	20 Feb 2023 09:27
Last Modified:	20 Feb 2023 09:27
URI:	https://eprints.iisc.ac.in/id/eprint/80377

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