Temperature Dependent "s-Shaped" Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment

Chowdhury, AM and Roul, B and Singh, DK and Pant, R and Nanda, KK and Krupanidhi, SB (2020) Temperature Dependent "s-Shaped" Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment. In: ACS Applied Nano Materials, 3 (8). pp. 8453-8460.

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Abstract

Temperature-dependent photoluminescence measurements are reported for n+- and n-type InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si (111) template. A temperature-dependent "S-shaped"behavior of the InGaN nanolayers above room temperature (up to 433 K) was observed and is explained using thermally activated redistribution model within a Gaussian distribution of localized states. Different parameters such as Huang-Rhys parameter (S), carrier recombination time (τr), and broadening parameter (σ) of Gaussian distribution for localized states have been derived for both n- and n+-type InGaN. It is interesting to note that the band gap shrinkage starts later for the case of n-type InGaN because of the dominance of higher localized states over electron-phonon interaction. This work opens a new avenue to advance the InGaN based light emitting devices for harsh environments.

Item Type:	Journal Article
Publication:	ACS Applied Nano Materials
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to American Chemical Society.
Keywords:	Aluminum nitride; Charge carriers; Electron-phonon interactions; Energy gap; Gaussian distribution; III-V semiconductors; Indium alloys; Molecular beam epitaxy; Photoluminescence; Semiconductor alloys, Broadening parameters; Carrier recombination time; Harsh environment; Light emitting devices; Plasma-assisted molecular beam epitaxy; Temperature dependent; Temperature dependent photoluminescences; Thermally activated, Gallium alloys
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	15 Feb 2023 03:39
Last Modified:	15 Feb 2023 03:39
URI:	https://eprints.iisc.ac.in/id/eprint/80247

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