Prasad, KVR and Varma, KBR (1994) Domain structure of $Bi_2Ge_xV_{1-x}O_{5.5-x/2}$ single crystals. In: Journal of Materials Science Letters, 13 (3). pp. 215-218.
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Abstract
Experimental evidence exists that ferroelectric crys- tals consist of many domains [1]. This was proved conclusively for $BaTiO_3$ by investigating its domain structure in detail using a polarizing microscope [2, 3]. In this letter we report the domain structure obtained by polarizing microscopy for off-valent, germanium $(Ge^4^+)$-doped single crystals of bismuth vanadate $(Bi_2VO_{5.5})$, which is a vanadium analogue of the n = 1 member of the Aurivillius family of oxides [4-6].
Item Type: | Journal Article |
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Publication: | Journal of Materials Science Letters |
Publisher: | Springer Netherlands |
Additional Information: | The copyright of this article belongs to Springer Netherlands. |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 16 Aug 2006 |
Last Modified: | 19 Sep 2010 04:30 |
URI: | http://eprints.iisc.ac.in/id/eprint/8024 |
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