Post deposition annealing dependent structural and C-V characteristics of (Ta2O5)0.965-(TiO2)0.035thin films

Thapliyal, P and Kandari, AS and Lingwal, V and Panwar, NS and Rao, GM (2020) Post deposition annealing dependent structural and C-V characteristics of (Ta2O5)0.965-(TiO2)0.035thin films. In: Materials Today: Proceedings, 5- 6 November 2020, Jaipur, pp. 3946-3950.

PDF icadma_2020.pdf - Published Version Restricted to Registered users only Download (663kB) | Request a copy

Abstract

(Ta2O5)1-x-(TiO2)x(TTO) thin films, with x=0.035, were deposited onto the P/boron-silicon (100) semiconducting substrates by reactive direct current (DC) magnetron sputtering of mosaic Ta and Ti metal targets, at ambient temperature. As-deposited films have been passed through the process of annealing at the temperatures, ranging from 500 to 800°C. X-ray diffraction measurements, generally, show the formation of Ta2O5structure of the annealed films. Metal-oxide-semiconductor (MOS) structure of Ag/(Ta2O5)1-x-(TiO2)x/p-Si (Ag/TTO/p-Si), with x=0.035, was formed, and capacitance of the structure was measured, at room temperature and 1MHz. Capacitance of prepared MOS structure was measured, and found generally, increasing with annealing temperature. Among the prepared films, maximum value of dielectric constant was found 45, at 1MHz, for the films annealed at 700°C. Frequency dependent behaviour of dielectric loss was observed, and was found minimum value of 0.022, at 200kHz, for the films deposited at room temperature. © 2020 Elsevier Ltd. All rights reserved.

Item Type:	Conference Paper
Publication:	Materials Today: Proceedings
Publisher:	Elsevier Ltd
Additional Information:	The copyright for this article belongs to Elsevier Ltd.
Keywords:	Annealing; Capacitance; Film preparation; High-k dielectric; Metals; MOS capacitors; Oxide semiconductors; Substrates; Tantalum oxides; Thin films, C-V characteristic; Direct current magnetron sputtering; Metal Oxide Semiconductor structure; Metal-oxide- semiconductorcapacitors; Post deposition annealing; Semiconducting substrates; Silicon (100); Sputtering; Thin-films; TiO 2, Titanium dioxide
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	07 Feb 2023 06:05
Last Modified:	07 Feb 2023 06:05
URI:	https://eprints.iisc.ac.in/id/eprint/79986

Actions (login required)

View Item