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Optimization of AlN spacer layer in MOVPE grown AlGaN/AlN/InGaN/GaN high electron mobility heterostructure

Singh, VK and Pandey, A and Tyagi, R (2020) Optimization of AlN spacer layer in MOVPE grown AlGaN/AlN/InGaN/GaN high electron mobility heterostructure. In: AIP Conference Proceedings, 14- 1 5 October 2019, Bikaner.

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Official URL: https://doi.org/10.1063/5.0001990


High electron mobility heterostructure AlGaN/AlN/InGaN/GaN, employing InGaN as the channel were grown using metal organic vapor phase epitaxy (MOVPE). In different samples, the AlN spacer layers were grown differently but at the temperature that were used for growth of InGaN channel i.e. at low temperature (LT) ~ 720°C. The grown samples were characterized using photoluminescence (PL), atomic force microscope (AFM) and Van der Pauw Hall measurement. As a result of optimization of AlN spacer, a significant improvement in rms surface roughness from Rq ~ 3.87 nm to Rq ~ 0.82 nm was obtained. The corresponding improvement in mobility of 2DEG was from μ ~ 39 cm2/V·s to μ ~ 201 cm2/V·s. The results show that optimum growth condition of LT AlN in such InGaN channel heterostructures should be decided on the basis of a reasonable trade-off between surface roughness and the transport properties of 2DEG.

Item Type: Conference Paper
Publication: AIP Conference Proceedings
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to American Institute of Physics Inc.
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 06 Feb 2023 09:22
Last Modified: 06 Feb 2023 09:22
URI: https://eprints.iisc.ac.in/id/eprint/79907

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