Effects of an interfacial layer on stress relaxation mechanisms active in the Cu-Si thin film system during thermal cycling

Somaiah, N and Kanjilal, A and Kumar, P (2020) Effects of an interfacial layer on stress relaxation mechanisms active in the Cu-Si thin film system during thermal cycling. In: MRS Communications, 10 (1). pp. 164-172.

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Abstract

The authors report effects of placing a very thin metallic interlayer, such as W and Ni, in between the Cu film and the Si substrate on cyclic thermal stress-induced interfacial sliding and hillock growth in Cu. Cu-Si samples with no interlayer were the most prone to both interfacial sliding and hillock growth, whereas samples with the Ni interlayer were the most resistant against these deleterious phenomena. While the rate of interfacial sliding decreased with each consecutive thermal cycle, hillocks continued to grow undeterred. The obtained experimental results are discussed, considering the compressive stress field generated in the Cu film

Item Type:	Journal Article
Publication:	MRS Communications
Publisher:	Cambridge University Press
Additional Information:	The copyright for this article belongs to Cambridge University Press.
Keywords:	Compressive stress; Copper; Metallic films; Silicon compounds; Stress relaxation; Thermal cycling; Thin films, Hillock growth; Interfacial layer; Interfacial sliding; Metallic interlayer; Ni interlayers; Relaxation mechanism; Si substrates; Thin film systems, Copper compounds
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	02 Feb 2023 04:51
Last Modified:	02 Feb 2023 04:51
URI:	https://eprints.iisc.ac.in/id/eprint/79704

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