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Enhanced photodetection performance of silver-doped tin sulfide photodetectors for visible light photodetection

Alagarasan, D and Varadharajaperumal, S and Aadhavan, R and Shanmugavelu, B and Naik, R and Kh, S and Haunsbhavi, K and Shkir, M and El Sayed Massoud, E and Ganesan, R (2023) Enhanced photodetection performance of silver-doped tin sulfide photodetectors for visible light photodetection. In: Sensors and Actuators A: Physical, 349 .

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Official URL: https://doi.org/10.1016/j.sna.2022.114065


SnS and Ag doped (0.5, 1.0, 1.5, and 2 at%) SnS thin films were fabricated using thermal evaporation method for application in light detecting devices. X-ray diffraction (XRD) confirmed the polycrystalline character of all produced films, and it was found that all samples crystallised into the orthorhombic crystal structure. In all of the produced films, Raman spectra clearly displays the peaks associated with the SnS phase. Field emission scanning electron microscopy (FESEM) images reveals that the crystallites are arranged in a nanosheet-like pattern. Energy dispersive spectroscopy (EDS) confirmed the existence of Sn, S, and Ag elements, as well as their stoichiometry, in the as-deposited film. The optical bandgap values were observed to rise up to 1.5 at% of Ag in SnS, after which more Ag in SnS decreases the bandgap. Photo-sensing measurements revealed that sensing qualities enhanced for Ag-doping in SnS thin films up to 1.5 at% Ag and then reduced for 2 at% Ag. The highest levels of responsivity (R), external quantum efficiency (EQE), and detectivity (D*) were attained with 1.5 at% Ag-doped SnS, with R, EQE, and D* values of 1.32 × 10-1AW, 31 %, and 4.77 × 109 Jones, respectively. The improved phtodetection performance might be explained by a decrease in charge carrier recombination rates and grain size modification to the right size.

Item Type: Journal Article
Publication: Sensors and Actuators A: Physical
Publisher: Elsevier B.V.
Additional Information: The copyright for this article belongs to Elsevier B.V.
Keywords: Crystal structure; Energy gap; Field emission microscopes; Image enhancement; IV-VI semiconductors; Layered semiconductors; Photocatalytic activity; Photodetectors; Photons; Scanning electron microscopy; Semiconductor doping; Silver; Thermal evaporation; Thin films; Tin; Tin compounds, Ag doped; Ag doping; External quantum efficiency; Performance; Photo detection; SnS thin films; Thermal evaporation method; Thermal evaporation technique; Tin sulfide; Visible light, Optical properties
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 Jan 2023 07:10
Last Modified: 31 Jan 2023 07:10
URI: https://eprints.iisc.ac.in/id/eprint/79622

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