Universal Conductance Fluctuations in Three Dimensional Metallic Single Crystals of Si

Ghosh, Arindam and Raychaudhuri, AK (2000) Universal Conductance Fluctuations in Three Dimensional Metallic Single Crystals of Si. In: Physical Review Letters, 84 (20). pp. 4681-4684.

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Abstract

In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. $(L/L_\phi \sim10^3 $ , where $L_\phi $ is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of $L^3 _\phi $ were found to be saturated at $<( \delta G_\phi)^2 >$ $\approx $ $(e^2 /h)^2 $. An accurate knowledge of the level of disorder enables us to calculate the change in conductance $\delta G_1 $ due to movement of a single scatterer as $<(\delta G_1)^2 >$ ~ $(e^2 /h)^2 $, which is ~2 orders of magnitude higher than its theoretically expected value in 3D systems.

Item Type:	Journal Article
Publication:	Physical Review Letters
Publisher:	American Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	07 Jul 2006
Last Modified:	19 Sep 2010 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/7962

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