Improved Short-Circuit Protection Scheme with Fast Fault Detection for SiC MOSFET

Ahmad, SS and Prasad, KNV and Narayanan, G (2022) Improved Short-Circuit Protection Scheme with Fast Fault Detection for SiC MOSFET. In: 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, 9 - 13 October 2022, Detroit.

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Abstract

Wide-band-gap devices switch fast, leading to improved efficiency and compactness. However, since their fault-current withstand capability is reduced, these require fast detection of and protection from faults. Reduction of fault detection time in desaturation-based protection requires reducing the blanking capacitance. But, this results in large voltage oscillations across the blanking capacitor, leading to spurious trip of the power converter, particularly during device turn-off and discontinues current mode (DCM) operation of the converter. This paper proposes a means to achieve fast fault detection through low blanking capacitance, ensuring no spurious converter trip. The proposed fault-detection and protection scheme is successfully demonstrated for very low blanking capacitance, contributed to only by parasitic capacitances. Worst-case detection times for fault under load (FUL) and hard switching fault (HSF) are estimated. Low detection times are demonstrated experimentally for both types of faults. The proposed protection scheme is deployed successfully in an 800-V(dc), 50-A(rms), 50-kHz asymmetric H-bridge converter for driving high-speed switched reluctance machine. © 2022 IEEE.

Item Type:	Conference Paper
Publication:	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Bridge circuits; Electric power system protection; Energy gap; Fault detection; MOSFET devices; Power converters; Silicon; Silicon carbide; Timing circuits; Wide band gap semiconductors, Converter protection; Desat protection; Detection time; Faults detection; Gate drivers; Low blanking capacitance; Protection schemes; Short-circuit protection; SiC MOSFETs; Spurious fault detection, Capacitance
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	25 Jan 2023 09:25
Last Modified:	25 Jan 2023 09:25
URI:	https://eprints.iisc.ac.in/id/eprint/79508

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