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Epitaxial stabilization of ultra thin films of high entropy perovskite

Patel, RK and Ojha, SK and Kumar, S and Saha, A and Mandal, P and Freeland, JW and Middey, S (2020) Epitaxial stabilization of ultra thin films of high entropy perovskite. In: Applied Physics Letters, 116 (7).

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Official URL: https://doi.org/10.1063/1.5133710


High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO (La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2)NiO3 thin films on NdGaO3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO3. Since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor. © 2020 Author(s).

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics Inc.
Additional Information: The copyright for this article belongs to the Authors.
Keywords: Entropy; Gallium compounds; Metal insulator boundaries; Morphology; Nanocrystalline materials; Neodymium compounds; Nickel compounds; Orbits; Perovskite; Perovskite solar cells; Pulsed laser deposition; Rare earths; Reflection high energy electron diffraction; Semiconductor insulator boundaries; Surface morphology; Transition metals; Ultrathin films; X ray absorption spectroscopy, Electrical transport measurements; Electronic behaviors; Epitaxial stabilization; Layer-by-layer growth; NdGaO3 substrates; Single-crystalline; Temperature dependent; Tolerance factor, Metal insulator transition
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 24 Jan 2023 11:27
Last Modified: 24 Jan 2023 11:27
URI: https://eprints.iisc.ac.in/id/eprint/79438

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