Mitra, R and Sahu, MR and Watanabe, K and Taniguchi, T and Shtrikman, H and Sood, AK and Das, A (2020) Anomalous Coulomb Drag between InAs Nanowire and Graphene Heterostructures. In: Physical Review Letters, 124 (11).
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Abstract
Correlated charge inhomogeneity breaks the electron-hole symmetry in two-dimensional (2D) bilayer heterostructures which is responsible for nonzero drag appearing at the charge neutrality point. Here we report Coulomb drag in novel drag systems consisting of a two-dimensional graphene and a one-dimensional (1D) InAs nanowire (NW) heterostructure exhibiting distinct results from 2D-2D heterostructures. For monolayer graphene (MLG)-NW heterostructures, we observe an unconventional drag resistance peak near the Dirac point due to the correlated interlayer charge puddles. The drag signal decreases monotonically with temperature (∼T-2) and with the carrier density of NW (∼nN-4), but increases rapidly with magnetic field (∼B2). These anomalous responses, together with the mismatched thermal conductivities of graphene and NWs, establish the energy drag as the responsible mechanism of Coulomb drag in MLG-NW devices. In contrast, for bilayer graphene (BLG)-NW devices the drag resistance reverses sign across the Dirac point and the magnitude of the drag signal decreases with the carrier density of the NW (∼nN-1.5), consistent with the momentum drag but remains almost constant with magnetic field and temperature. This deviation from the expected T2 arises due to the shift of the drag maximum on graphene carrier density. We also show that the Onsager reciprocity relation is observed for the BLG-NW devices but not for the MLG-NW devices. These Coulomb drag measurements in dimensionally mismatched (2D-1D) systems, hitherto not reported, will pave the future realization of correlated condensate states in novel systems. © 2020 American Physical Society.
| Item Type: | Journal Article |
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| Publication: | Physical Review Letters |
| Publisher: | American Physical Society |
| Additional Information: | The copyright for this article belongs to the Authors. |
| Keywords: | Carrier concentration; Graphene; Graphene devices; III-V semiconductors; Magnetic fields; Nanowires; Thermal conductivity, Anomalous response; Bilayer Graphene; Charge neutrality; Drag resistance; Electron hole symmetry; Inhomogeneities; Onsager reciprocity; Two Dimensional (2 D), Drag |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 24 Jan 2023 06:48 |
| Last Modified: | 24 Jan 2023 06:48 |
| URI: | https://eprints.iisc.ac.in/id/eprint/79391 |
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