Carrier-type reversal in Pb-modified chalcogenide glasses

Murugavel, S and Asokan, S (1998) Carrier-type reversal in Pb-modified chalcogenide glasses. In: Physical Review B, 58 (8). pp. 4449-4453.

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Abstract

Carrier-type reversal (p to n) has been observed, in $Pb_xGe_{42-x}Se_{48}Te_{10}$ glasses $(0\leq{x}\leq20)$ at 8 at. % of lead. dc electrical resistivity (p) and activation energy for electrical conduction $(\triangle{E})$ are found to exhibit notable change at the p-n transition threshold, which are associated with the change in the electron concentration during p-n transition. The observed p-n transition has been explained in light of the recent Kolobov model on the basis of modification of charged defect states by the introduction of lead. Also, the influence of other factors, such as band structure, polarizability of the dopant, etc., on the carrier-type reversal, has been discussed.

Item Type:	Journal Article
Publication:	Physical Review B
Publisher:	The American Physical Society
Additional Information:	Copyright of this artilce belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	02 Aug 2006
Last Modified:	19 Sep 2010 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/7929

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