Effect of strain and temperature on the behavior of oxygen ion implanted manganese films

Rajanna, K and Muralidhar, GK and Nair, KGM and Panchapagesan, T and Nayak, MM and Mohan, S (1994) Effect of strain and temperature on the behavior of oxygen ion implanted manganese films. In: Journal of Applied Physics, 76 (6). pp. 3573-3578.

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Abstract

The strain sensitive and temperature behavior of the oxygen ion implanted manganese films have been studied for their possible application as strain gauges. Films were subjected to different ion dosages and the resistance-strain behavior was studied. Also, the resistance variation of films with temperature was studied and TCR (temperature co-efficient of resistance) values were calculated.The structure and surface morphology of the films were examined using x-ray diffraction and scanning electron microscopy methods, respectively. The TCR value as low as $3.94X10^{-5}/^oC$ has been observed at lower annealing temperatures. It was found that both Mn and $MnO_2$ phases exist in the film after annealing, Observed data indicate that metallic conduction is the predominant mechanism in these films.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute Of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	06 Jul 2006
Last Modified:	19 Sep 2010 04:30
URI:	http://eprints.iisc.ac.in/id/eprint/7928

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