Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination

Mondal, S (2019) Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination. In: 63rd DAE Solid State Physics Symposium 2018, 18 - 22 December 2018, Haryana.

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Abstract

This experiment demonstrates the tunable charge trapping behavior of fully solution processed ZrO2 (MOS) in presence of different optical illumination. To ensure the tenability of charge trapping behavior, the capacitance voltage measurement was performed at frequency of 100 kHz with DC gate sweep voltage of ± 5V (with additional AC ∼100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is observed that there is a large hysteresis in CV curve of 2.24V with trap charge density(n) of 1.42×1012 cm-2 due to presence of deep UV light. However, hysteresis degrades to 2.02V (n ∼1.34×1012 cm-2) and 1.55V (n ∼1.03×1012 cm-2) for illumination of white light and dark condition respectively. So, the charge trapping capability of ZrO2 can be tuned up to 27% from dark to UV light illumination.

Item Type:	Conference Paper
Publication:	AIP Conference Proceedings
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Jan 2023 05:41
Last Modified:	09 Jan 2023 05:41
URI:	https://eprints.iisc.ac.in/id/eprint/78886

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