Investigations on HI Reduced Graphene Based FET for Photon Detection

Garg, A and Shruthi, G and Baishali, G and Radhakrishna, V and Guneshekharan, KR (2019) Investigations on HI Reduced Graphene Based FET for Photon Detection. In: 2019 IEEE Photonics Conference, IPC 2019, 29 - 3 October 2019, San Antonio.

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Abstract

Reduced graphene oxide-based field effect transistor is fabricated and tested for detection of UV photons in 100-280 nm range. A novel technique is used for reduction of Graphene oxide. The fabricated device showed promising response to UV photons in terms of resistance change in rGO. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	2019 IEEE Photonics Conference, IPC 2019 - Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Field effect transistors; Graphene; Photodetectors; Photonics; Photons; Raman spectroscopy, Fabricated device; Novel techniques; Photon detection; Reduced graphene oxides; Resistance change; UV photons; UV-photon detectors, Graphene transistors
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	06 Jan 2023 09:12
Last Modified:	06 Jan 2023 09:12
URI:	https://eprints.iisc.ac.in/id/eprint/78831

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