ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

A Closed-Loop In-Plane Movable Suspended Gate FET (CLIP-SGFET) Sensor With a Dynamically Reconfigurable Charge Pump

Martha, P and Ganga, KM and Sebastian, A and Seena, V and Kadayinti, N (2022) A Closed-Loop In-Plane Movable Suspended Gate FET (CLIP-SGFET) Sensor With a Dynamically Reconfigurable Charge Pump. In: IEEE Sensors Journal, 22 (22). pp. 21550-21560.

[img] PDF
IEEE_sen_jou_ 22-22_ 21550 - 21560.pdf - Published Version
Restricted to Registered users only

Download (7MB) | Request a copy
Official URL: https://doi.org/10.1109/JSEN.2022.3210646


This article proposes a single-axis, highperformance Complementary Metal Oxide Semiconductor- Microelectromechanical System (CMOS-MEMS) closed-loop accelerometer, implemented using in-plane movable suspended gate-field-effect transistor (IP-SGFET). The IPSGFET's gate is embedded within a movable proof mass supported by flexible folded beams. The external acceleration displaces the proofmass, which changes the drain current of IP-SGFET. The change in current is read out with the help of a simple differential amplifier which is constructed with the IP-SGFET. The differential amplifier's output voltage is used througha closed-loopintegral controland a high-voltage dynamically reconfigurable charge pump, which generates a high-voltage differential drive of up to 10.5 ± 5.12 V, to drive an actuator that brings the gate back to its resting position. The actuator used is a comb-drive type electromechanical actuator. In this work, two tools, viz., MEMS+ and Technology Computer Aided Design (TCAD) device simulation tools are used in a sequential manner to handle the electrostatics coupled with the micro-mechanical domain present in the suspended gate field effect transistors (SGFET). The results obtained are then used as look-up-tables for the design and simulation of the entire system, including the control circuits, in SPECTRE. Appropriate design of the MEMS suspended structure, the field effect transistor (FET) device, and interface circuit results in a open-loop sensitivity of 927 mV/g with a near-zero cross-axis sensitivity. Using the actuator and the reconfigurable charge pump, closed-loop operation is realized with a dynamic range of ±4 g at a supply voltage of 3.3 V.

Item Type: Journal Article
Publication: IEEE Sensors Journal
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Charge pump circuits; CMOS integrated circuits; Differential amplifiers; Drain current; Field effect transistors; Field programmable gate arrays (FPGA); Integrated circuit design; Reconfigurable hardware; Table lookup, Air-gaps; Charge-pump; Closed loop in-plane movable suspended gate FET; Closed-loop; CMOS-MEMS; MEMS accelerometer; Reconfigurable; Reconfigurable charge pump; Sensitivity; Suspended gates, Accelerometers
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 01 Jan 2023 07:06
Last Modified: 01 Jan 2023 07:06
URI: https://eprints.iisc.ac.in/id/eprint/78643

Actions (login required)

View Item View Item