Insights on anisotropic dissipative quantum transport in n-type Phosphorene MOSFET

Brahma, M and Kabiraj, A and Mahapatra, S (2019) Insights on anisotropic dissipative quantum transport in n-type Phosphorene MOSFET. In: 32nd International Conference on VLSI Design, VLSID 201, 5 January 2019 - 9 January 2019, New Delhi, pp. 179-184.

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Abstract

We study the quantum dissipative transport in Phosphorene n-type metal oxide semiconductor field effect transistor (MOSFET) in armchair and zigzag directions. The transport equations are solved quantum mechanically under the non-equilibrium Green’s function (NEGF) formalism and relies on a single-band effective mass Hamiltonian. The treatment of electron phonon scattering is done under the self consistent Born approximation (SCBA). We investigate in detail the effect of different acoustic and optical phonon modes on the drain current of the device for different channel lengths. We show that optical phonon mode with a deformation potential constant of 8.07×108 eV/cm and energy 0.0421 eV plays the most important role in electron phonon scattering and subsequent degradation of ON current in devices along both directions. We also find that effect of electron phonon scattering is more pronounced along zigzag direction.

Item Type:	Conference Paper
Publication:	Proceedings - 32nd International Conference on VLSI Design, VLSID 2019 - Held concurrently with 18th International Conference on Embedded Systems, ES 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Born approximation; Drain current; Electron diffraction; Electron scattering; Electron-phonon interactions; Embedded systems; Hamiltonians; Metals; MOS devices; MOSFET devices; Oxide semiconductors; Phonon scattering; VLSI circuits, -Phosphorene; Deformation potential; Dissipative transport; Electron phonon scattering; Optical phonon modes; S function; Self-consistent Born approximation; Transport equation, Quantum chemistry
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	27 Dec 2022 06:16
Last Modified:	27 Dec 2022 06:16
URI:	https://eprints.iisc.ac.in/id/eprint/78581

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