Analysis of DC Characteristics of AlGaN/GaN HEMTs: Simulation

Ajay, A and Chander, S and Gupta, M (2019) Analysis of DC Characteristics of AlGaN/GaN HEMTs: Simulation. In: 4th International Conference on Devices, Circuits and Systems, ICDCS 2018, 16 - 17 March 2018, Coimbatore, pp. 8-11.

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Abstract

this paper, a systematic studies have been performed on the different architectures of AlGaN/GaN high-electron-mobility transistors (HEMTs) through Sentaurus simulation software. The DC characteristics have been investigated for three different architectures of AlGaN/GaN HEMTs (Common Drain, Common Source and Conventional HEMTs). The common dra(CD) AlGaN/GaN HEMT shows the better DC characteristics comparison to the common source (CS) AlGaN/GaN HEMT and conventional AlGaN/GaN HEMT.

Item Type:	Conference Paper
Publication:	Proceedings of the 4th International Conference on Devices, Circuits and Systems, ICDCS 2018
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Computer software; Gallium nitride; III-V semiconductors; Transconductance, AlGaN/gaN; AlGaN/GaN HEMTs; Algan/gan high electron-mobility transistors; Common source; DC characteristics; Dracurrent; Simulation software; Systematic study, High electron mobility transistors
Department/Centre:	Division of Electrical Sciences > Computer Science & Automation
Date Deposited:	29 Nov 2022 06:32
Last Modified:	29 Nov 2022 06:32
URI:	https://eprints.iisc.ac.in/id/eprint/78094

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