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Enhancement-mode high electron mobility transistor on sic substrate with t-gate field plate for high power applications

Chander, S and Ajay, null and Gupta, M (2019) Enhancement-mode high electron mobility transistor on sic substrate with t-gate field plate for high power applications. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 289-299.

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Official URL: https://doi.org/10.1007/978-3-319-97604-4_45


A normally Off-GaN based High Electron Mobility transistor is simulated using Sentaurus TCAD and demonstrated the DC and BV characteristics of the device. The divergence in the polarization charges from the barrier and buffer interface depletes the inherent 2DEG (Two-Dimensional Electron Gas) channel and makes the device in off-state. A considerable improvement in the breakdown voltage (BV) and transconductance (gm) are reported in this paper. The transconductance shows a flat behavior over a certain range of gate bias and shows a maximum of 158 mS/lm, which is the maximum, reported for a normally-off GaN based HEMT devices along with high power performance. The T-gate field plate effectively distributes the peak electric field at the drain end of the gate edge over the field plate length (LFP). Consequently, the BV of the device above 2 lm LFP shows a significant improvement. The higher transconductance and BV makes this device a suitable candidate for applications in future high power, high frequency applications.

Item Type: Conference Paper
Publication: Springer Proceedings in Physics
Publisher: Springer Science and Business Media, LLC
Additional Information: The copyright for this article belongs to Springer Science and Business Media, LLC.
Keywords: Electric fields; Electron gas; Electron mobility; Gallium nitride; III-V semiconductors; Interface states; Phase interfaces; Transconductance; Transistors; Two dimensional electron gas; Wide band gap semiconductors, Buffer interfaces; Enhancement-mode high electron mobility transistors; High power applications; High power performance; High-frequency applications; Peak electric field; Polarization charges; SiC substrates, High electron mobility transistors
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 18 Nov 2022 08:57
Last Modified: 18 Nov 2022 08:57
URI: https://eprints.iisc.ac.in/id/eprint/77986

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