A physics based analytical model for the threshold voltage of a normally-off algan/gan finfet

Ghatak, P and Dutta, D and Bhat, N (2019) A physics based analytical model for the threshold voltage of a normally-off algan/gan finfet. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 205-218.

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Abstract

Gallium nitride (GaN) based transistors are advantageous for high voltage power switching applications due to its superior material properties. In power switching applications normally-off transistors are preferred for their fail-safe operation at high voltages in addition to the advantages of lower power consumption and simpler drive circuits. However, planar AlGaN/GaN high-electron mobility transistors (HEMTs) are normally-on devices with negative threshold voltage due to the presence of polarization induced two-dimensional electron gas (2DEG) at the heterojunction at zero gate voltage. It has been experimentally observed that a normally-on AlGaN/GaN FinFET can be transformed into a normally-off transistor with positive threshold voltage by reducing the fin width. In this paper a physics based analytical model for the threshold voltage of a AlGaN/ GaN FinFET is presented. It is seen that the strain induced in the channel region in the piezoelectric GaN layer just below the heterojunction plays an important role in determining the threshold voltage at narrow fin widths.

Item Type:	Conference Paper
Publication:	Springer Proceedings in Physics
Publisher:	Springer Science and Business Media, LLC
Additional Information:	The copyright for this article belongs to Springer Science and Business Media, LLC.
Keywords:	Aluminum gallium nitride; Analytical models; Electron gas; FinFET; Fins (heat exchange); Fluorine compounds; Gallium nitride; Heterojunctions; III-V semiconductors; Semiconductor switches; Threshold voltage; Transistors; Two dimensional electron gas; Wide band gap semiconductors, Algan/gan high electron-mobility transistors; Drive circuits; Gallium nitrides (GaN); High voltage power; Lower-power consumption; Power switching applications; Strain induced; Two-dimensional electron gas (2DEG), High electron mobility transistors
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	18 Nov 2022 08:52
Last Modified:	18 Nov 2022 08:52
URI:	https://eprints.iisc.ac.in/id/eprint/77985

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