Effect of surface treatments on the evolution of microstructures in gan thin films and gan/algan/ gan heterostructures

Agrawal, M and Mehta, BR and Muralidharan, R (2019) Effect of surface treatments on the evolution of microstructures in gan thin films and gan/algan/ gan heterostructures. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 187-190.

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Abstract

In this study the effect of hot phosphoric acid treatment on the evolution of microstructures in plasma assisted molecular beam epitaxy grown GaN thin films and GaN/AlGaN/GaN heterostructures is investigated. The surface morphology of the as grown samples and chemically treated samples is studied using field emission scanning electron microscopy which reveal the formation of different geometrical microstructures namely dodecagonal pyramids in one sample and hexagonal pits in the other after chemical treatment due to the different polar nature of GaN in both the samples.

Item Type:	Conference Paper
Publication:	Springer Proceedings in Physics
Publisher:	Springer Science and Business Media, LLC
Additional Information:	The copyright for this article belongs to Springer Science and Business Media, LLC.
Keywords:	Aluminum compounds; Field emission microscopes; Gallium nitride; Heterojunctions; III-V semiconductors; Microstructural evolution; Molecular beam epitaxy; Scanning electron microscopy; Surface morphology; Thin films; Wide band gap semiconductors, As-grown; Chemical treatments; Field emission scanning electron microscopy; GaN thin films; Phosphoric acid treatments; Plasma assisted molecular beam epitaxy, Morphology
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	23 Nov 2022 05:26
Last Modified:	23 Nov 2022 05:26
URI:	https://eprints.iisc.ac.in/id/eprint/77982

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