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Tio2 thin film optimization for ammonia gas sensing

Sakhuja, N and Bhat, N (2019) Tio2 thin film optimization for ammonia gas sensing. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 819-828.

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Official URL: https://doi.org/10.1007/978-3-319-97604-4_123


The influence of Argon to Oxygen ratio on Ammonia sensing properties of reactive DC magnetron sputtered TiO2 thin film has been investigated. The film deposited at highest ratio exhibited mixed phase (Anatase and Rutile) while the film deposited at the lowest ratio showed no crystallinity as analyzed by X-ray diffraction (XRD). The mixed phase TiO2 film showed enhanced response towards NH3 in the concentration range of 50 ppb (6.6) to 3 ppm (347) at 250 °C, which could be correlated to the crystalline phase of TiO2. The roughness of this film was the highest (1.55 nm) among others owing to the morphology of the film.

Item Type: Conference Paper
Publication: Springer Proceedings in Physics
Publisher: Springer Science and Business Media, LLC
Additional Information: The copyright for this article belongs to Springer Science and Business Media, LLC.
Keywords: Ammonia; Crystallinity; Morphology; Oxide minerals; Semiconductor devices; Titanium dioxide, Ammonia gas; Ammonia sensing; Concentration ranges; Crystalline phase; Mixed phase; Oxygen ratios; TiO2 film; TiO2 thin films, Thin films
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Nov 2022 05:23
Last Modified: 23 Nov 2022 05:23
URI: https://eprints.iisc.ac.in/id/eprint/77981

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