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Investigation of sensitivity of gate underlap junctionless dg mosfet for biomolecules

Ajay, null and Narang, R and Saxena, M and Gupta, M (2019) Investigation of sensitivity of gate underlap junctionless dg mosfet for biomolecules. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 717-724.

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Official URL: https://doi.org/10.1007/978-3-319-97604-4_110


In this letter, a simulation based investigation has been done to calculate the sensitivity of the gate underlap Junctionless (JL) Double Gate (DG) MOSFET for label free electrical detection of the biomolecules. The impact of biomolecules has been investigated of the various electrostatic characteristics of the JL DG MOSFET. The simulation has been carried out with the help of Sentaurus Device Simulator tool. The underlying Gate underlap JL DG MOSFET has been virtually fabricated by using Sprocess tool of Sentaurus.

Item Type: Conference Paper
Publication: Springer Proceedings in Physics
Publisher: Springer Science and Business Media, LLC
Additional Information: The copyright for this article belongs to Springer Science and Business Media, LLC.
Keywords: Biomolecules, Device simulators; DG MOSFETs; Double gate MOSFET; Electrical detection; Electrostatic characteristics; Gate underlap; Label free; S-process, MOSFET devices
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 18 Nov 2022 07:04
Last Modified: 18 Nov 2022 07:04
URI: https://eprints.iisc.ac.in/id/eprint/77979

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