Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs

Joshi, V and Gupta, SD and Chaudhuri, RR and Shrivastava, M (2022) Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic RONin AlGaN/GaN HEMTs. In: IEEE Transactions on Electron Devices, 69 (11). pp. 6035-6042.

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Abstract

Using a well-calibrated computational framework, we reveal a complex interplay between the device design and the epi-stack parameters, which determines the electron trapping in the carbon-doped GaN buffer, leading to dynamic ON resistance (RON) in AlGaN/GaN HEMTs. The parameters being considered here are surface trap concentration, passivation thickness, field plate length, unintentionally doped (UID) GaN channel thickness, strain-induced piezoelectric polarization in the AlGaN layer, buffer traps, and carbon-Si co-doping of the GaN buffer. The role of surface traps in determining the extent of electron injection and trapping in the GaN buffer is revealed. Furthermore, its dependence on piezoelectric polarization in the AlGaN layer and implications on dynamicRONis discussed. Correlation among the passivation thickness, the field plate length, and the UID channel thickness affecting the channel electric field profile is explored, which, in turn, determines the extent of electron injection into the GaN buffer and eventually the extent of the dynamicRONdegradation. This work also develops detailed physical insights explaining the mechanisms responsible for the disclosed complex interplay. This allowed us to discuss buffer-doping optimization to minimize electron trapping in the GaN buffer and resulting dynamicRONwhile maximizing the breakdown voltage of the device. These new findings are expected to provide guidelines to design dynamicRONresilient HEMTs and also to explain experimental trends associated with dynamicRONbehavior as a function of the device and epi-stack parameters.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Behavioral research; Carbon; Dynamics; Electron injection; Electrons; Energy gap; Gallium nitride; High electron mobility transistors; III-V semiconductors; Passivation; Piezoelectricity; Polarization; Semiconductor alloys; Semiconductor doping; Wide band gap semiconductors, AlGaN/GaN HEMTs; AlGaN/GaN-HEMT; Behavioral science; Buffer doping; Device design; Dynamic ON resistance; Electron trapping; GaN buffer; GaN buffer doping; Wide-band-gap semiconductor, Aluminum gallium nitride
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	20 Nov 2022 06:14
Last Modified:	20 Nov 2022 06:14
URI:	https://eprints.iisc.ac.in/id/eprint/77887

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