Soonmin, H and Hegde, SS and Ramesh, K and Dongre, JK and Khattak, YH and Zhang, X-H and Sadanand, S and Dwivedi, DK and Oeba, DA (2021) Chalcogenides-based nanomaterials for solar cells and dye sensitized solar cells. [Book Chapter]
Full text not available from this repository.Abstract
Currently, the world photovoltaic production is experiencing fast growth, reaching a record value of 97.5 GWp in 2017. However, less than 5 of this production is in form of thin films, essentially made of cadmium telluride and copper indium gallium sulfo-selenide meanwhile, silicon-wafer based solar cells represent about 95 of the total production. The issues associated with the toxicity of cadmium and the scarcity of indium and gallium might explain the continuously decreasing market share of thin film photovoltaic devices, which are however, needed for more and more applications thanks to its flexibility and lightweight. Moreover, industrials are still at the quest of devices prepared via low temperature processes to make possible thin film deposition on any kind of substrates at low cost.The search for new absorber materials is always attracting tremendous research efforts. Binary, ternary and quaternary semiconductor compounds have attracted considerable attention because of appropriate band gap values about 1-2Â eV with high-absorption coefficient value. Here, CdZnS, Sb2Se3, CZTS, CdBS, SnS, and CZTSSE films have been prepared by using various deposition methods. The behaviors of photovoltaic parameters such as fill factor and power conversion efficiency were discussed.
Item Type: | Book Chapter |
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Publication: | Chalcogenide-Based Nanomaterials as Photocatalysts |
Publisher: | Elsevier |
Additional Information: | The copyright for this article belongs to Elsevier. |
Keywords: | absorption coefficient; band gap; metal chalcogenide; solar cell; thin film |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 10 Nov 2022 06:52 |
Last Modified: | 10 Nov 2022 06:52 |
URI: | https://eprints.iisc.ac.in/id/eprint/77865 |
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