Enhancement of magnetoresistance in manganite multilayers

Venlmadhav, A and Hegde, MS and Prasad, V and Subramanyam, SV (2000) Enhancement of magnetoresistance in manganite multilayers. In: Journal of Physics D: Applied Physics, 33 (22). pp. 2921-2926.

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Abstract

Manganite multilayers have been fabricated using $La_{0.67}$$Ca_{0.33}$$MnO_3$ as the ferromagnetic layer and $Pr_{0.7}$$Ca_{0.3}$$MnO_3$ and $Nd_{0.5}$$Ca_{0.5}$$MnO_3$ as the spacer layers. All the multilayers were grown on $LaAlO_3$ (100) by pulse laser deposition. An enhanced magnetoresistance (defined ($R_H$ − $R_0$)/$R_0$) of more than 98% is observed in these multilayers. Also a low-field magnetoresistance of 41% at 5000 Oe is observed in these multilayer films. The enhanced magnetoresistance is attributed to the induced double exchange in the spacer layer, which gives rise to a greater number of conducting carriers. This is shown by replacing the spacer layer with $LaMnO_3$ where Mn exists only in the 3+ state and no enhancement is observed in the $La_{0.67}$$Ca_{0.33}$$MnO_3$/$LaMnO_3$ multilayers as a double exchange mechanism cannot be induced by external magnetic fields.

Item Type:	Journal Article
Publication:	Journal of Physics D: Applied Physics
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 Jun 2006
Last Modified:	19 Sep 2010 04:29
URI:	http://eprints.iisc.ac.in/id/eprint/7782

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