Balakrishnan, J and Preethi, LK and Kushvaha, SS and Mayandi, J (2022) Colloidal Quantum Dot Photodetectors for Infrared Imaging. [Book Chapter]
Full text not available from this repository.Abstract
Photodetection of infrared (IR) wavelengths is useful for a wide range of applications in defense and space communications for night vision, security surveillance, weather monitoring, telecommunications, primarily in the short-wave, mid-wave (3-5 μm) and long-wave (8-12 μm) IR transmission windows. In the conventional IR technology, PbS, HgCdTe are the standard materials, among others, in the specified regions with low dark current, high quantum efficiency, and fast response. Nevertheless, alternative materials have long been sought as conventional IR technology is associated with drawbacks such as low yield, complex fabrication steps, and high-cost. Colloidal quantum dots (CQDs) are excellent candidates as they possess an inherent capacity for broad spectral tunability, solution processibility, and high-temperature operation. CQDs of semiconductor nanocrystals, such as PbS, mercury chalcogenide compounds, Ag2Te, are quantum confined in three dimensions and can be synthesized by simple wet inorganic chemical methods. This chapter describes the fundamental physics, properties of CQDs and the advantages of employing them for IR imaging against the conventional single-crystal counterparts. In the last two decades of research, CQDs have seen enormous progress in performance, and the detectivity of HgTe CQD photodetectors has reached values comparable to commercial interest. The evolution and present status of the CQDbased photodetectors in the infrared region has been reviewed, and their standard specifications are presented. Moreover, solution processing techniques are versatile and has enabled easy fabrication of various device architectures to help improve the device performance and achieve multiple functionalities. Many research groups have shown novel device architectures opening new opportunities for photoconductors, photodiodes, and phototransistors. The basic theory of device operation, potential, and limitations have been surveyed. The challenges associated with CQDs in controlling the doping level, capping layer materials, surface trap passivation, and the approaches employed to address them are summarized and concluded with the prospects of the technology.
| Item Type: | Book Chapter |
|---|---|
| Publication: | Types of Photodetectors and their Applications |
| Series.: | Electronics and Telecommunications Research |
| Publisher: | Nova Science Publishers, Inc. |
| Additional Information: | The copyright of the article belongs to Nova Science Publishers, Inc. |
| Keywords: | colloidal quantum dots; HgTe CQDs; infrared photodetectors; mid-wave infrared; semiconductor nanocrystals |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 28 Oct 2022 09:21 |
| Last Modified: | 28 Oct 2022 09:21 |
| URI: | https://eprints.iisc.ac.in/id/eprint/77752 |
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