Reduced phosphorus loss from InP surface during hydrogen plasma treatment

Balasubramanian, Sathya and Kumar, Vikram and Balasubramanian, N (1994) Reduced phosphorus loss from InP surface during hydrogen plasma treatment. In: Applied Physics Letters, 64 (13). pp. 1696-1698.

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Abstract

A new method for plasma hydrogenation of InP with a reduced phosphorus loss is reported. The loss of P from InP surface is suppressed by the use of a sacrificial InP wafer kept directly in the plasma while the test sample is kept away from it in a downstream geometry. It is shown using photoluminescence that the P vacancy related transitions are considerably reduced for InP hydrogenated in the presence of a sacrificial wafer when compared to the one hydrogenated without it. The results suggest the utility of the sacrificial InP wafer in providing a P overpressure during H plasma exposure.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 Jun 2006
Last Modified:	19 Sep 2010 04:29
URI:	http://eprints.iisc.ac.in/id/eprint/7770

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