Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation

John, B and Vardhurajaperumal, S (2022) Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation. In: Journal of Electronic Materials .

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Abstract

In this report, FTO/n-CdS/p-SnSe1-xOx/Au heterojunction diodes were fabricated using a homemade precursor followed by dry milling with a facile thermal evaporation method under oxygen atmosphere (10− 2 mbar) for the first time. The chemical purity (45.35:45.07:9.58 at.%) and microstructure of the deposited films and device were characterized by energy dispersive x-ray analysis, x-ray photoelectron spectroscopy, and scanning electron microscopy. The crystallographic parameters, a = 11.512 Å, b = 4.163 Å and c = 4.452 Å, with orthorhombic crystal structure and monophase nature were analyzed by powder x-ray diffraction. Raman spectroscopy revealed the vibrational modes, and UV–Vis-NIR spectroscopy was used to study the direct nature of optical absorption with a band gap of 1.14 eV. The current–voltage (I-V) characteristics of the semiconductor diode were measured in room temperature (25°C) and revealed rectifying properties and the cut-off voltage for the device, 0.57 V. The obtained results highlight that the use of a p-SnSe1-xOx (SSO) layer as an interface between n-CdS/Au diodes exhibits excellent rectifying behavior and enhanced diode performance. Therefore, the p-SSO layer is a suitable material for heterojuction diodes and optoelectronic switches. Graphical Abstract: [Figure not available: see fulltext.]

Item Type:	Journal Article
Publication:	Journal of Electronic Materials
Publisher:	Springer
Additional Information:	The copyright for this article belongs to the Springer.
Keywords:	Chemical analysis; Crystal structure; Energy dispersive X ray analysis; Energy gap; Heterojunctions; II-VI semiconductors; Infrared devices; Light absorption; Near infrared spectroscopy; Oxygen; Scanning electron microscopy; Semiconductor diodes; Thermal evaporation; Thin films; Tin compounds; X ray diffraction analysis; X ray photoelectron spectroscopy, Chemical purity; Current-voltage characteristics; Dry milling; Heterojunction diodes; Oxygen atmosphere; Oxygen-doped; Oxygen-doped snse thin film; Thermal evaporation method; Thin-film diode; Thin-films, Selenium compounds
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	04 Nov 2022 07:05
Last Modified:	04 Nov 2022 07:05
URI:	https://eprints.iisc.ac.in/id/eprint/77677

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